DocumentCode
2008069
Title
Photoluminescence and electrical characterization of transparent Eu and Pd-doped TiO2 thin films
Author
Domaradzki, J. ; Borkowska, A. ; Kaczmarek, D.
Author_Institution
Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol.
fYear
2006
fDate
Oct. 2006
Firstpage
63
Lastpage
66
Abstract
In this work, optical and electrical characterization of transparent Eu and Pd-doped TiO2 thin films have been presented. Thin films were deposited by low pressure hot target reactive magnetron sputtering form metallic Ti-Pd-Eu mosaic target on silicon. It has been shown that incorporation of Pd and Eu dopants into TiO2 matrix could modify its properties to obtain electrically and optically active oxide-semiconductor with the electron-type (n) of electrical conduction at room temperature. Pd dopant changes the electrical properties of TiO2 from dielectric oxide to conducting oxide. Eu dopant results in enhanced optical activity of Pd-doped TiO2 thin films in ultraviolet range
Keywords
europium; palladium; photoluminescence; semiconductor thin films; sputtered coatings; titanium compounds; Eu dopants; Pd dopants; TiO2:Eu; TiO2:Pd; active oxide-semiconductor; conducting oxide; dielectric oxide; electrical characterization; electrical conduction; electrical properties; low pressure hot target reactive magnetron sputtering; metallic Ti-Pd-Eu mosaic target; optical characterization; photoluminescence; transparent Eu-doped thin films; transparent Pd-doped thin films; Dielectric thin films; Ocean temperature; Optical films; Photoluminescence; Sea measurements; Semiconductor thin films; Silicon; Spectroscopy; Sputtering; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
Conference_Location
Smolenice Castle
Print_ISBN
1-4244-0369-0
Type
conf
DOI
10.1109/ASDAM.2006.331154
Filename
4133078
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