DocumentCode :
2008069
Title :
Photoluminescence and electrical characterization of transparent Eu and Pd-doped TiO2 thin films
Author :
Domaradzki, J. ; Borkowska, A. ; Kaczmarek, D.
Author_Institution :
Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol.
fYear :
2006
fDate :
Oct. 2006
Firstpage :
63
Lastpage :
66
Abstract :
In this work, optical and electrical characterization of transparent Eu and Pd-doped TiO2 thin films have been presented. Thin films were deposited by low pressure hot target reactive magnetron sputtering form metallic Ti-Pd-Eu mosaic target on silicon. It has been shown that incorporation of Pd and Eu dopants into TiO2 matrix could modify its properties to obtain electrically and optically active oxide-semiconductor with the electron-type (n) of electrical conduction at room temperature. Pd dopant changes the electrical properties of TiO2 from dielectric oxide to conducting oxide. Eu dopant results in enhanced optical activity of Pd-doped TiO2 thin films in ultraviolet range
Keywords :
europium; palladium; photoluminescence; semiconductor thin films; sputtered coatings; titanium compounds; Eu dopants; Pd dopants; TiO2:Eu; TiO2:Pd; active oxide-semiconductor; conducting oxide; dielectric oxide; electrical characterization; electrical conduction; electrical properties; low pressure hot target reactive magnetron sputtering; metallic Ti-Pd-Eu mosaic target; optical characterization; photoluminescence; transparent Eu-doped thin films; transparent Pd-doped thin films; Dielectric thin films; Ocean temperature; Optical films; Photoluminescence; Sea measurements; Semiconductor thin films; Silicon; Spectroscopy; Sputtering; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
1-4244-0369-0
Type :
conf
DOI :
10.1109/ASDAM.2006.331154
Filename :
4133078
Link To Document :
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