DocumentCode
2008081
Title
Multi-frequency laser monolithically integrating InGaAsP gain elements with amorphous silicon AWG
Author
Kwakernaak, M.H. ; Chan, W.K. ; Maley, N. ; Mohseni, H. ; Yang, L. ; Capewell, D.R. ; Kharas, B. ; Frantz, V. ; Mood, T. ; Pajer, G.A. ; Ackerman, D.A. ; Kim, J.G. ; Lee, D.H.
Author_Institution
Sarnoff Corp., Princeton, NJ, USA
fYear
2006
fDate
5-10 March 2006
Abstract
We demonstrate a photonic integrated circuit using a novel monolithic integration platform combining InGaAsP gain elements and index matched amorphous silicon waveguide devices. The AWG based multi-frequency laser emits eight 100-GHz-spaced wavelengths near 1550 nm.
Keywords
III-V semiconductors; amorphous semiconductors; arrayed waveguide gratings; elemental semiconductors; gallium arsenide; indium compounds; integrated optics; optical design techniques; optical fabrication; semiconductor lasers; silicon; InGaAsP; Si; amorphous silicon AWG; index matching; monolithically integrating InGaAsP gain elements; multifrequency laser; photonic integrated circuit; Amorphous silicon; Arrayed waveguide gratings; Indium phosphide; Optical materials; Optical refraction; Optical variables control; Optical waveguides; Photonic integrated circuits; Substrates; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference, 2006 and the 2006 National Fiber Optic Engineers Conference. OFC 2006
Print_ISBN
1-55752-803-9
Type
conf
DOI
10.1109/OFC.2006.215482
Filename
1636513
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