Title :
Multi-frequency laser monolithically integrating InGaAsP gain elements with amorphous silicon AWG
Author :
Kwakernaak, M.H. ; Chan, W.K. ; Maley, N. ; Mohseni, H. ; Yang, L. ; Capewell, D.R. ; Kharas, B. ; Frantz, V. ; Mood, T. ; Pajer, G.A. ; Ackerman, D.A. ; Kim, J.G. ; Lee, D.H.
Author_Institution :
Sarnoff Corp., Princeton, NJ, USA
Abstract :
We demonstrate a photonic integrated circuit using a novel monolithic integration platform combining InGaAsP gain elements and index matched amorphous silicon waveguide devices. The AWG based multi-frequency laser emits eight 100-GHz-spaced wavelengths near 1550 nm.
Keywords :
III-V semiconductors; amorphous semiconductors; arrayed waveguide gratings; elemental semiconductors; gallium arsenide; indium compounds; integrated optics; optical design techniques; optical fabrication; semiconductor lasers; silicon; InGaAsP; Si; amorphous silicon AWG; index matching; monolithically integrating InGaAsP gain elements; multifrequency laser; photonic integrated circuit; Amorphous silicon; Arrayed waveguide gratings; Indium phosphide; Optical materials; Optical refraction; Optical variables control; Optical waveguides; Photonic integrated circuits; Substrates; Waveguide lasers;
Conference_Titel :
Optical Fiber Communication Conference, 2006 and the 2006 National Fiber Optic Engineers Conference. OFC 2006
Print_ISBN :
1-55752-803-9
DOI :
10.1109/OFC.2006.215482
