Title :
Thermoelectric transport properties of porous silicon nanostructure
Author :
Yamamoto, Atsushi ; Takazawa, Hiroyuki ; Ohta, Toshitaka
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
fDate :
Aug. 29 1999-Sept. 2 1999
Abstract :
We evaluated the in-plane thermoelectric transport properties of self-supporting porous silicon samples which were prepared through anodization of degenerate silicon wafer. Rapid decrease of both electrical and thermal conductivity were observed alter the anodization. The thermal conductivities decreased by two orders, while the electrical conductivities were three to five orders of magnitude lower than that of initial silicon at room temperature. Increase of Seebeck coefficient was observed for the 69% porous PS sample and the figure of merit was larger than that of initial silicon. It was found that the reduction in electrical conductivity is larger than that of thermal conductivity. Low conductivity of PS indicates localized carriers due to depletion of carrier and strong scattering taking place in residual silicon nanostructure.
Keywords :
Seebeck effect; carrier density; carrier mobility; elemental semiconductors; nanostructured materials; porous semiconductors; silicon; thermal conductivity; thermoelectric power; Seebeck coefficient; Si; anodization; degenerate silicon wafer; electrical conductivities; figure of merit; localized carriers; porous Si nanostructure; strong scattering; thermal conductivity; thermoelectric transport properties; Conducting materials; Conductivity measurement; Current density; Electric variables measurement; Laboratories; Particle scattering; Silicon; Temperature; Thermal conductivity; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1999. Eighteenth International Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-5451-6
DOI :
10.1109/ICT.1999.843422
