DocumentCode
2008097
Title
Silicon impact-ionization multiplier for optical detection
Author
Lee, Hong-Wei ; Beutler, Joshua L. ; Hawkins, Aaron R.
Author_Institution
Electr. & Comput. Eng. Dept., Brigham Young Univ., Provo, UT, USA
fYear
2006
fDate
5-10 March 2006
Abstract
We demonstrate a current multiplier which can be operated with either silicon or indium-gallium-arsenide photodiodes for optical detection. Current gains above 100 along with pre-amplified leakage currents of less than 2 nA were measured.
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; impact ionisation; indium compounds; photodetectors; photodiodes; semiconductor device measurement; silicon; Si; indium-gallium-arsenide photodiode; optical detection; silicon impact-ionization multiplier; silicon photodiode; Charge carrier processes; Impact ionization; Indium gallium arsenide; Indium phosphide; Optical detectors; Photoconductivity; Photodiodes; Schottky barriers; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference, 2006 and the 2006 National Fiber Optic Engineers Conference. OFC 2006
Print_ISBN
1-55752-803-9
Type
conf
DOI
10.1109/OFC.2006.215483
Filename
1636514
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