DocumentCode
2008103
Title
Structural, optical and electrical properties of nanocrystalline TiO2 -- HfO2 thin films
Author
Domaradzki, J. ; Kaczmarek, D.
Author_Institution
Fac. of Microsystem Electron. & Photonics, Wroclaw Univ. of Technol.
fYear
2006
fDate
16-18 Oct. 2006
Firstpage
67
Lastpage
70
Abstract
In the present work the properties of mixed HfxTi1-xO2 solid solution thin films in metal-oxide-semiconductor (MOS) configuration have been studied. Thin films, were grown on monocrystalline silicon substrates using the low pressure hot target reactive sputtering from the Ti:Hf mosaic target. From optical transmission measurements the 3.42 (eV) bandgap of the thin films has been estimated. Electrical characterization of the prepared MOS structures shows classical capacitance- and current-voltage behaviors indicating medium-k gate oxide properties with the low leakage current
Keywords
dielectric thin films; elemental semiconductors; hafnium compounds; leakage currents; nanostructured materials; silicon; sputtering; titanium compounds; 3.42 eV; MOS structures; TiO2-HfO2-Si; electrical characterization; electrical properties; leakage current; low pressure hot target reactive sputtering; medium-k gate oxide properties; metal-oxide-semiconductor configuration; monocrystalline silicon substrates; nanocrystalline TiO2-HfO2 thin films; optical properties; optical transmission measurements; solid solution thin films; structural properties; Annealing; Dielectric thin films; Hafnium oxide; Optical films; Photonic band gap; Semiconductor thin films; Silicon; Solids; Sputtering; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
Conference_Location
Smolenice Castle
Print_ISBN
1-4244-0369-0
Type
conf
DOI
10.1109/ASDAM.2006.331155
Filename
4133079
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