• DocumentCode
    2008155
  • Title

    Nickel ohmic contact on silicon carbide

  • Author

    Machac, Pavel ; Barda, B. ; Sajdl, P.

  • fYear
    2006
  • fDate
    Oct. 2006
  • Firstpage
    71
  • Lastpage
    74
  • Abstract
    We obtained ohmic contact structure with the best contact resistivity of 4.06times10-4 Omega cm2 and with excellent thermal stability - the metallization was stable after being tested for 10 hours at 900 degC. The as deposited structure contains oxygen and carbon. Make allowance for the composition of the species in the structure after annealing Ni and Si create Ni2Si silicides. The reaction release carbon so the structure contains large quantity of vacant carbon
  • Keywords
    annealing; contact resistance; nickel; ohmic contacts; silicon compounds; thermal stability; wide band gap semiconductors; 10 hours; 900 C; Ni2Si; Ni2Si silicides; SiC; annealing; contact resistivity; nickel ohmic contact; oxygen; silicon carbide; thermal stability; vacant carbon; Annealing; Conductivity; Metallization; Nickel; Ohmic contacts; Silicides; Silicon carbide; Testing; Thermal resistance; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
  • Conference_Location
    Smolenice Castle
  • Print_ISBN
    1-4244-0369-0
  • Type

    conf

  • DOI
    10.1109/ASDAM.2006.331156
  • Filename
    4133080
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2008155