DocumentCode :
2008155
Title :
Nickel ohmic contact on silicon carbide
Author :
Machac, Pavel ; Barda, B. ; Sajdl, P.
fYear :
2006
fDate :
Oct. 2006
Firstpage :
71
Lastpage :
74
Abstract :
We obtained ohmic contact structure with the best contact resistivity of 4.06times10-4 Omega cm2 and with excellent thermal stability - the metallization was stable after being tested for 10 hours at 900 degC. The as deposited structure contains oxygen and carbon. Make allowance for the composition of the species in the structure after annealing Ni and Si create Ni2Si silicides. The reaction release carbon so the structure contains large quantity of vacant carbon
Keywords :
annealing; contact resistance; nickel; ohmic contacts; silicon compounds; thermal stability; wide band gap semiconductors; 10 hours; 900 C; Ni2Si; Ni2Si silicides; SiC; annealing; contact resistivity; nickel ohmic contact; oxygen; silicon carbide; thermal stability; vacant carbon; Annealing; Conductivity; Metallization; Nickel; Ohmic contacts; Silicides; Silicon carbide; Testing; Thermal resistance; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
1-4244-0369-0
Type :
conf
DOI :
10.1109/ASDAM.2006.331156
Filename :
4133080
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2008155
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