Influence of films and substrates thermal expansion discrepancy on bismuth film thermoelectric properties

The results of bismuth films on various substrates thermoelectric properties research are brought. A film are received by evaporation in vacuum. A film had thickness from 0.05 micron up to 1.5 micron. It is found out large influence of temperature expansion bismuth and substrate materials distinction on bismuth films thermoelectric properties. The substrate deforms a bismuth films at temperature reduction. This planar tension or compressing deformation is similar of axial compressing or tension deformation in plane perpendicular direction (along an axis C/sub 3/). Change of charge carriers concentration on mechanical deformations included in film-substrate system is designed. Change of charge carriers concentration in bismuth films on various substrates is calculated. These results well coincide with received from experiment. The bismuth films Seebeck coefficient peculiarities governed by competition film size effect, borders crystallite relaxation effect and included thermal expansion coefficients film and substrate discrepancy film deformation. The included of films and substrates thermal expansion discrepancy bismuth films mechanical deformation changes partial path transport coefficient values and its ratio and in consequence of changes Seebeck coefficient values and temperature dependence form.