DocumentCode :
2008173
Title :
Thermoelectric properties on antimonide skutterudites and filled skutterudites
Author :
Akai, Koji ; Oshiro, Kazunori ; Matsuura, Mitsuru
Author_Institution :
Fac. of Eng., Yamaguchi Univ., Ube, Japan
fYear :
1999
fDate :
Aug. 29 1999-Sept. 2 1999
Firstpage :
444
Lastpage :
447
Abstract :
We study thermoelectric properties on IrSb/sub 3/ and the electronic structure of YbFe/sub 4/Sb/sub 12/. The band structure of IrSb/sub 3/ is calculated by the full-potential linearized augmented plane wave (FLAPW) method with and without the consideration of the spin-orbit(SO) interaction. The calculated valence and conduction band structures near the band gap are fitted well by a simple band model, i.e., the Kane´s nonparabolic bands and the parabolic bands. Using the simple band model, thermoelectric properties are calculated easily. In the calculation the relaxation time is dealt with the two types of the approximation, i.e. a constant relaxation time and a relaxation time which is inversely proportional to the electronic density of states (DOS). The results indicate that the detailed consideration of the scattering mechanism is necessary. In YbFe/sub 4/Sb/sub 12/ the DOS is obtained by the ab initio band calculation. The DOS at the Fermi energy is in good agreement of the experimental value, and thus the correlation effect of electron-electron interaction due to the localized f-orbital seems to be weak in the system.
Keywords :
APW calculations; Fermi level; band structure; electronic density of states; energy gap; iridium compounds; iron compounds; localised states; thermoelectric power; ytterbium compounds; Fermi energy; IrSb/sub 3/; Kane´s nonparabolic bands; YbFe/sub 4/Sb/sub 12/; ab initio band calculation; antimonide skutterudites; band gap; band structure; conduction band structures; correlation effect; electron-electron interaction; electronic density of states; filled skutterudites; full-potential linearized augmented plane wave method; localized f-orbital; parabolic bands; relaxation time; scattering mechanism; simple band model; spin-orbit interaction; thermoelectric properties; valence band structures; Charge carrier processes; Conducting materials; Lattices; Phonons; Photonic band gap; Reactive power; Scattering; Thermal conductivity; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1999. Eighteenth International Conference on
Conference_Location :
Baltimore, MD, USA
ISSN :
1094-2734
Print_ISBN :
0-7803-5451-6
Type :
conf
DOI :
10.1109/ICT.1999.843426
Filename :
843426
Link To Document :
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