DocumentCode
2008173
Title
Thermoelectric properties on antimonide skutterudites and filled skutterudites
Author
Akai, Koji ; Oshiro, Kazunori ; Matsuura, Mitsuru
Author_Institution
Fac. of Eng., Yamaguchi Univ., Ube, Japan
fYear
1999
fDate
Aug. 29 1999-Sept. 2 1999
Firstpage
444
Lastpage
447
Abstract
We study thermoelectric properties on IrSb/sub 3/ and the electronic structure of YbFe/sub 4/Sb/sub 12/. The band structure of IrSb/sub 3/ is calculated by the full-potential linearized augmented plane wave (FLAPW) method with and without the consideration of the spin-orbit(SO) interaction. The calculated valence and conduction band structures near the band gap are fitted well by a simple band model, i.e., the Kane´s nonparabolic bands and the parabolic bands. Using the simple band model, thermoelectric properties are calculated easily. In the calculation the relaxation time is dealt with the two types of the approximation, i.e. a constant relaxation time and a relaxation time which is inversely proportional to the electronic density of states (DOS). The results indicate that the detailed consideration of the scattering mechanism is necessary. In YbFe/sub 4/Sb/sub 12/ the DOS is obtained by the ab initio band calculation. The DOS at the Fermi energy is in good agreement of the experimental value, and thus the correlation effect of electron-electron interaction due to the localized f-orbital seems to be weak in the system.
Keywords
APW calculations; Fermi level; band structure; electronic density of states; energy gap; iridium compounds; iron compounds; localised states; thermoelectric power; ytterbium compounds; Fermi energy; IrSb/sub 3/; Kane´s nonparabolic bands; YbFe/sub 4/Sb/sub 12/; ab initio band calculation; antimonide skutterudites; band gap; band structure; conduction band structures; correlation effect; electron-electron interaction; electronic density of states; filled skutterudites; full-potential linearized augmented plane wave method; localized f-orbital; parabolic bands; relaxation time; scattering mechanism; simple band model; spin-orbit interaction; thermoelectric properties; valence band structures; Charge carrier processes; Conducting materials; Lattices; Phonons; Photonic band gap; Reactive power; Scattering; Thermal conductivity; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1999. Eighteenth International Conference on
Conference_Location
Baltimore, MD, USA
ISSN
1094-2734
Print_ISBN
0-7803-5451-6
Type
conf
DOI
10.1109/ICT.1999.843426
Filename
843426
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