Multi-generation device fabrication by ArF lithography

Author

Mori, S. ; Morisawa, T. ; Matsuzawa, N. ; Kaimoto, Y. ; Endo, M. ; Matsuo, T. ; Takahashi, M. ; Naito, T. ; Naruse, Y. ; Kishimura, S. ; Takechi, S. ; Yamaguchi, A. ; Uematsu, M. ; Onodera, T. ; Nakazawa, K. ; Kamon, K. ; Tatsumi, T. ; Morishita, S. ; Kuh

Author_Institution

Yokohama Res. Center, Kanagawa, Japan

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

933

Lastpage

935

Abstract

Summary form only given. Although ArF excimer laser lithography is expected to attain the highest resolution possible in optical lithography, its application to 0.13-/spl mu/m devices has not been adequately demonstrated. In next generation sub-0.10 /spl mu/m devices, it is believed that the mix and match process is indispensable with optical lithography and other types of lithography. One reason is the difficulty of fabricating contact holes with a larger process margin. Here, we demonstrate that it is possible to make 0.13-/spl mu/m patterns using a single layer resist in combination with resolution enhancement techniques, and to make sub-0.10 /spl mu/m contact holes using the Top Surface Imaging (TSI) process.

Keywords

argon compounds; excimer lasers; image resolution; photolithography; 0.09 mum; 0.13 mum; ArF; ArF excimer laser lithography; contact hole fabrication; methacrylate copolymer; mix/match process; multi-generation device fabrication; optical lithography; process margin; resolution enhancement techniques; single layer resist; top surface imaging process; Coatings; Fabrication; High-resolution imaging; Image resolution; Lithography; Optical devices; Optical imaging; Optical sensors; Phasor measurement units; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650535

Filename

650535