Energy band diagram and charge distribution in AlGaN/GaN heterostructure studied by classical approach

Author

Osvald, J.

Author_Institution

Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava

fYear

2006

fDate

Oct. 2006

Firstpage

83

Lastpage

86

Abstract

In this paper, classical approach was used to calculate energy band diagrams of AlGaN/GaN heterostructures. This approach enables to calculate the band diagram and carrier concentrations also when the external bias is applied on the structure. Also the potential on the Schottky barrier is more rigorously defined as in a self-consistent solution of Poisson and Schrodinger equations. Dependence of the band profile and the carrier concentration of the two-dimensional gas on the piezoelectric charge can also be calculated by this approach

Keywords

III-V semiconductors; Poisson equation; Schottky barriers; Schrodinger equation; aluminium compounds; band structure; carrier density; gallium compounds; wide band gap semiconductors; AlGaN-GaN; Poisson equation; Schottky barrier; Schrodinger equation; carrier concentrations; charge distribution; energy band diagram; heterostructure; piezoelectric charge; two-dimensional gas; Aluminum gallium nitride; Atomic layer deposition; Capacitive sensors; Electrons; Gallium nitride; Optical polarization; Pain; Piezoelectric polarization; Poisson equations; Schottky barriers;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on

Conference_Location

Smolenice Castle

Print_ISBN

1-4244-0369-0

Type

conf

DOI

10.1109/ASDAM.2006.331159

Filename

4133083