Title :
Spectroscopic ellipsometric study of LPCVD-deposited Si nanocrystals in SiNx and Si3N4
Author :
Basa, P. ; Petrik, P. ; Fried, M.
Author_Institution :
Res. Inst. for Tech. Phys. & Mater. Sci., Hungarian Acad. of Sci., Budapest
Abstract :
Low-pressure chemical vapour deposited and annealed SiNx/nc-Si/SiNx and Si3N4/nc-Si/Si3N4 layers prepared on Si substrates were characterized by spectroscopic ellipsometry. The effective medium approximation model was used to obtain the thickness, the composition and homogeneity of the layers. It was obtained that the deposited nc-Si layer thickness depended on the stoichiometry of the underlying silicon nitride layer
Keywords :
annealing; chemical vapour deposition; ellipsometry; nanostructured materials; silicon compounds; spectroscopy; thickness measurement; LPCVD; Si3N4-Si-Si3N4; SiN-Si-SiN; SiNx-Si-SiNx; annealling; layer composition; layer homogeneity; layer stoichiometry; layer thickness; low-pressure chemical vapour deposition; medium approximation; nanocrystals; spectroscopic ellipsometry; Chemicals; Dielectric materials; Electrons; Ellipsometry; Nanocrystals; Optical films; Rough surfaces; Silicon compounds; Spectroscopy; Surface roughness;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
1-4244-0369-0
DOI :
10.1109/ASDAM.2006.331160
