Simulation of Advanced Tunneling Devices

The progressive shrinking of the physical gate length of MOS devices involves problems such as punch-through, DIBL, and roll-off. In order to cope with short channel effects in nanoscale MOS devices, alternative device concepts, among others the tunnel FET, have been suggested. The proper description of the operation of these devices requires the consideration of two mechanisms of electron tunneling through the bandgap: defect-assisted and phonon-assisted tunneling. Both prove to be crucial for predictive device simulation, making it possible to obtain realistic device characteristics of tunneling transistors