Title :
Simulation of Advanced Tunneling Devices
Author :
Heigl, A. ; Wachutka, G.
Author_Institution :
Inst. for Phys. of Electrotechnol., Munich Univ. of Technol.
Abstract :
The progressive shrinking of the physical gate length of MOS devices involves problems such as punch-through, DIBL, and roll-off. In order to cope with short channel effects in nanoscale MOS devices, alternative device concepts, among others the tunnel FET, have been suggested. The proper description of the operation of these devices requires the consideration of two mechanisms of electron tunneling through the bandgap: defect-assisted and phonon-assisted tunneling. Both prove to be crucial for predictive device simulation, making it possible to obtain realistic device characteristics of tunneling transistors
Keywords :
MIS devices; field effect transistors; semiconductor device models; tunnel transistors; tunnelling; MOS devices; defect-assisted tunneling; electron tunneling; phonon-assisted tunneling; predictive device simulation; short channel effects; tunnel FET; tunneling devices simulation; tunneling transistors; Analytical models; Electrons; MOS devices; Nanoscale devices; Numerical simulation; Photonic band gap; Radiative recombination; Semiconductor materials; Tunneling; Voltage;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
1-4244-0369-0
DOI :
10.1109/ASDAM.2006.331169
