Title :
Simulation of the p-type RTD
Author_Institution :
Dept. of Microelectron., CTU FEE Prague, Praha
Abstract :
The simulation of I-V characteristics of p-type AlAs-GaAs resonant tunneling diodes (RTD) is presented. P-type RTDs are important for the possible spintronic applications. The modification of nonequilibrium Green function (NEGF) based ID quantum transport simulator Wingreen is used for the hole transport simulation. Our results are analyzed from point of view of RTD geometrical and physical parameters
Keywords :
Green´s function methods; III-V semiconductors; aluminium compounds; gallium arsenide; magnetoelectronics; resonant tunnelling diodes; semiconductor device models; AlAs-GaAs; I-V characteristics; Wingreen; geometrical parameter; hole transport simulation; nonequilibrium Green´s function; p-type RTD; physical parameter; quantum transport simulator; resonant tunneling diodes; spintronic applications; Diodes; Electrons; Gallium arsenide; Green function; Magnetoelectronics; Microelectronics; Molecular beam epitaxial growth; Resonance; Resonant tunneling devices; Semiconductor process modeling;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
1-4244-0369-0
DOI :
10.1109/ASDAM.2006.331170
