DocumentCode
2008389
Title
Simulation of the p-type RTD
Author
Voves, J.
Author_Institution
Dept. of Microelectron., CTU FEE Prague, Praha
fYear
2006
fDate
Oct. 2006
Firstpage
125
Lastpage
128
Abstract
The simulation of I-V characteristics of p-type AlAs-GaAs resonant tunneling diodes (RTD) is presented. P-type RTDs are important for the possible spintronic applications. The modification of nonequilibrium Green function (NEGF) based ID quantum transport simulator Wingreen is used for the hole transport simulation. Our results are analyzed from point of view of RTD geometrical and physical parameters
Keywords
Green´s function methods; III-V semiconductors; aluminium compounds; gallium arsenide; magnetoelectronics; resonant tunnelling diodes; semiconductor device models; AlAs-GaAs; I-V characteristics; Wingreen; geometrical parameter; hole transport simulation; nonequilibrium Green´s function; p-type RTD; physical parameter; quantum transport simulator; resonant tunneling diodes; spintronic applications; Diodes; Electrons; Gallium arsenide; Green function; Magnetoelectronics; Microelectronics; Molecular beam epitaxial growth; Resonance; Resonant tunneling devices; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
Conference_Location
Smolenice Castle
Print_ISBN
1-4244-0369-0
Type
conf
DOI
10.1109/ASDAM.2006.331170
Filename
4133094
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