Title :
Damascene integration of copper and ultra-low-k xerogel for high performance interconnects
Author :
Zielinski, E.M. ; Russell, S.W. ; List, R.S. ; Wilson, A.M. ; Jin, C. ; Newton, K.J. ; Lu, J.P. ; Hurd, T. ; Hsu, W.Y. ; Cordasco, V. ; Gopikanth, M. ; Korthuis, V. ; Lee, W. ; Cerny, G. ; Russell, N.M. ; Smith, P.B. ; O´Brien, S. ; Havemann, R.H.
Author_Institution :
Semicond. Process & Device Center, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Copper has been successfully integrated in ultra-low k xerogel in a damascene structure. Resistance was shown to decrease by 30% with lower capacitance, relative to an aluminum/oxide baseline. For an equivalent resistance, an aluminum/oxide architecture would have 29% higher capacitance than that demonstrated here. Copper in xerogel trenches shows great promise as the next generation metallization system.
Keywords :
capacitance; copper; electric resistance; gels; integrated circuit interconnections; integrated circuit metallisation; leakage currents; 1.7 muohmcm; Cu; Cu metallization; capacitance; damascene structure; high performance interconnects; leakage current; next generation metallization system; resistance decrease; sheet resistance; ultra-low-k xerogel; xerogel trenches; Atherosclerosis; Capacitance; Conductivity; Copper; Damascene integration; Dielectric constant; Etching; Silicon; Thermal expansion; Tin;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650536
