DocumentCode
2008408
Title
Micro-Raman scattering: A versatile tool for characterization of semiconductor structures
Author
Irmer, G.
Author_Institution
Inst. of Theor. Phys., TU Bergakademie Freiberg
fYear
2006
fDate
Oct. 2006
Firstpage
133
Lastpage
138
Abstract
As a non-destructive and relatively rapid method, Raman spectroscopy is well established for the characterization of semiconductor substrates, heterostructures and devices. Some applications of micro-Raman spectroscopy to measurements of stress, crystallinity and charge carriers in semiconductor structures are discussed with emphasis on the scope and the limitations of the information that can be obtained with Raman spectroscopy
Keywords
Raman spectra; Raman spectroscopy; nondestructive testing; semiconductor devices; semiconductor materials; stress measurement; Raman spectroscopy; charge carriers measurement; crystallinity measurement; micro Raman scattering; nondestructive method; relatively rapid method; semiconductor structures; stress measurement; Crystallization; Frequency; Optical scattering; Phonons; Raman scattering; Spectroscopy; Strain measurement; Stress measurement; Substrates; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
Conference_Location
Smolenice Castle
Print_ISBN
1-4244-0369-0
Type
conf
DOI
10.1109/ASDAM.2006.331172
Filename
4133096
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