Title :
Complex ternary mixed layered tetradymite-like chalcogenides as novel thermoelectrics
Author :
Shelimova, L.E. ; Konstantinov, P.P. ; Karpinsky, O.G. ; Avilov, E.S. ; Kretova, M.A. ; Fleurial, J.P.
Author_Institution :
Inst. of Metall. & Mater. Sci., Acad. of Sci., Moscow, Russia
fDate :
Aug. 29 1999-Sept. 2 1999
Abstract :
The nGeTe-mBi/sub 2/Te/sub 3/ and nGeTe-mSb/sub 2/Te/sub 3/ homologous series mixed layered (Mt.) compounds have been investigated by X-ray diffraction. A variety of the ML long-period structures is discovered in the GeTe-Bi/sub 2/Te/sub 3/ and GeTe-Sb/sub 2/Te/sub 3/ quasi-binary systems. Temperature dependencies of Hall coefficient, electrical resistivity and Seebeck coefficient have been measured in a wide temperature range. A mixed carrier scattering mechanism on acoustic phonons and point defects is proposed to explain the carrier mobility temperature dependence at low temperatures. It is found that the ML compounds are characterized by extremely low lattice thermal conductivity at 300 K: /spl kappa//sub ph/=5-7 mW/cm K.
Keywords :
Hall effect; Seebeck effect; X-ray diffraction; antimony compounds; bismuth compounds; carrier mobility; electrical resistivity; germanium compounds; thermal conductivity; thermoelectric power; GeTe-Bi/sub 2/Te/sub 3/; GeTe-Sb/sub 2/Te/sub 3/; Hall coefficient; Seebeck coefficient; X-ray diffraction; acoustic phonons; carrier mobility temperature dependence; complex ternary mixed layered tetradymite-like chalcogenides; electrical resistivity; extremely low lattice thermal conductivity; mixed carrier scattering mechanism; nGeTe-mBi/sub 2/Te/sub 3/; nGeTe-mSb/sub 2/Te/sub 3/; point defects; thermoelectrics; Acoustic measurements; Acoustic scattering; Electric resistance; Electric variables measurement; Tellurium; Temperature dependence; Temperature distribution; Thermal conductivity; X-ray diffraction; X-ray scattering;
Conference_Titel :
Thermoelectrics, 1999. Eighteenth International Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-5451-6
DOI :
10.1109/ICT.1999.843446
