DocumentCode :
2008567
Title :
Physical properties of transparent conductive oxides prepared by RF reactive sputtering
Author :
Tvarozek, V. ; Novotny, I. ; Sutta, P. ; Flickyngerova, S. ; Harmatha, L. ; Vavrinsky, E. ; Nigrovicova, M. ; Mullerova, J.
Author_Institution :
Dept. of Microelectron., Slovak Univ. of Technol., Bratislava
fYear :
2006
fDate :
Oct. 2006
Firstpage :
169
Lastpage :
172
Abstract :
Transparent conductive oxide thin films (indium tin oxide, zinc oxide and Al doped zinc oxide) were prepared by RF diode sputtering. Selected properties of these films (structure, resistivity and transparency) were investigated with the aim to use them in thin film solar cells
Keywords :
II-VI semiconductors; aluminium; electrical resistivity; indium compounds; semiconductor materials; semiconductor thin films; solar cells; sputter deposition; transparency; zinc compounds; Al doped zinc oxide; InSnO; RF diode sputtering; RF reactive sputtering; ZnO:Al; indium tin oxide; physical properties; resistivity; structure; thin film solar cells; transparency; transparent conductive oxides thin films; Conductive films; Conductivity; Indium tin oxide; Optical films; Radio frequency; Rough surfaces; Semiconductor films; Sputtering; Surface roughness; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
1-4244-0369-0
Type :
conf
DOI :
10.1109/ASDAM.2006.331181
Filename :
4133105
Link To Document :
بازگشت