DocumentCode
2008567
Title
Physical properties of transparent conductive oxides prepared by RF reactive sputtering
Author
Tvarozek, V. ; Novotny, I. ; Sutta, P. ; Flickyngerova, S. ; Harmatha, L. ; Vavrinsky, E. ; Nigrovicova, M. ; Mullerova, J.
Author_Institution
Dept. of Microelectron., Slovak Univ. of Technol., Bratislava
fYear
2006
fDate
Oct. 2006
Firstpage
169
Lastpage
172
Abstract
Transparent conductive oxide thin films (indium tin oxide, zinc oxide and Al doped zinc oxide) were prepared by RF diode sputtering. Selected properties of these films (structure, resistivity and transparency) were investigated with the aim to use them in thin film solar cells
Keywords
II-VI semiconductors; aluminium; electrical resistivity; indium compounds; semiconductor materials; semiconductor thin films; solar cells; sputter deposition; transparency; zinc compounds; Al doped zinc oxide; InSnO; RF diode sputtering; RF reactive sputtering; ZnO:Al; indium tin oxide; physical properties; resistivity; structure; thin film solar cells; transparency; transparent conductive oxides thin films; Conductive films; Conductivity; Indium tin oxide; Optical films; Radio frequency; Rough surfaces; Semiconductor films; Sputtering; Surface roughness; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
Conference_Location
Smolenice Castle
Print_ISBN
1-4244-0369-0
Type
conf
DOI
10.1109/ASDAM.2006.331181
Filename
4133105
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