Title :
Impact of technology scaling on RF CMOS
Author :
Hassan, Hassan ; Anis, Mohab ; Elmasry, Mohamed
Author_Institution :
VLSI Res. Group, Waterloo Univ., Ont., Canada
Abstract :
Inspired by the huge improvement in the RF properties of CMOS, RF designers are invading the wireless market with all-CMOS RF transceivers and system-on-chip implementations. In this work, the impact of technology scaling on the RF properties of the CMOS; frequency properties, noise performance, linearity, stability, and non-quasi static effects, is investigated to provide RF designers with an insight to the capabilities of future CMOS technologies. Using the BSIM4 model it is found that future CMOS technologies have high prospects in the RF industry.
Keywords :
CMOS integrated circuits; integrated circuit design; radiofrequency integrated circuits; system-on-chip; transceivers; RF CMOS; RF design; all-CMOS RF transceiver; frequency property; noise performance; system-on-chip; CMOS technology; Cutoff frequency; Linearity; Radio frequency; Semiconductor device modeling; Silicon; Stability; System-on-a-chip; Transceivers; Very large scale integration;
Conference_Titel :
SOC Conference, 2004. Proceedings. IEEE International
Print_ISBN :
0-7803-8445-8
DOI :
10.1109/SOCC.2004.1362363
