DocumentCode
2008572
Title
Impact of technology scaling on RF CMOS
Author
Hassan, Hassan ; Anis, Mohab ; Elmasry, Mohamed
Author_Institution
VLSI Res. Group, Waterloo Univ., Ont., Canada
fYear
2004
fDate
12-15 Sept. 2004
Firstpage
97
Lastpage
101
Abstract
Inspired by the huge improvement in the RF properties of CMOS, RF designers are invading the wireless market with all-CMOS RF transceivers and system-on-chip implementations. In this work, the impact of technology scaling on the RF properties of the CMOS; frequency properties, noise performance, linearity, stability, and non-quasi static effects, is investigated to provide RF designers with an insight to the capabilities of future CMOS technologies. Using the BSIM4 model it is found that future CMOS technologies have high prospects in the RF industry.
Keywords
CMOS integrated circuits; integrated circuit design; radiofrequency integrated circuits; system-on-chip; transceivers; RF CMOS; RF design; all-CMOS RF transceiver; frequency property; noise performance; system-on-chip; CMOS technology; Cutoff frequency; Linearity; Radio frequency; Semiconductor device modeling; Silicon; Stability; System-on-a-chip; Transceivers; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
SOC Conference, 2004. Proceedings. IEEE International
Print_ISBN
0-7803-8445-8
Type
conf
DOI
10.1109/SOCC.2004.1362363
Filename
1362363
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