Title :
Direct seed electroplating of copper on ruthenium liners
Author :
Akolkar, Rohan ; Indukuri, Tejaswi ; Clarke, James ; Ponnuswamy, Thomas ; Reid, Jonathan ; McKerrow, Andrew J. ; Varadarajan, Sesha
Author_Institution :
Components Res., Intel Corp., Hillsboro, OR, USA
Abstract :
The ruthenium (Ru) liner based metallization scheme depends on the ability to electrodeposit Cu onto thin, resistive Ru substrates with substantially high Cu nuclei density. In the present paper, a novel electrochemical bath that utilizes Cu-complexing agents to improve the nucleation of plated Cu films on Ru is presented. Such chemistries can generate Cu nucleation density on Ru greater than 1012 nuclei/cm2, thereby enabling robust gap-fill in aggressive (CD~30 nm) dual damascene structures. Complexed-Cu plating chemistries thus provide great potential for extending Cu metallization to future technology nodes.
Keywords :
electrochemistry; electroplating; metallisation; nucleation; Cu; Ru; copper nuclei density; direct seed electroplating; dual damascene structures; electrochemical bath; metallization scheme; nucleation density; resistive ruthenium substrates; ruthenium liners; Additives; Chemistry; Copper; Density measurement; Electrodes; Films; Metallization;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940261
