Low contact resistance of 30 nm and 200 nm diameter Bi wire array composites

Author

Huber, T.E. ; Graf, M.J. ; Foss, C.A., Jr.

Author_Institution

Dept. of Chem., Howard Univ., Washington, DC, USA

fYear

1999

fDate

Aug. 29 1999-Sept. 2 1999

Firstpage

558

Lastpage

561

Abstract

We have prepared Bi wire arrays with diameters between 200 nm and 30 nm in a matrix of porous anodic alumina. The wire array conductivity down to 0.3 K has been measured as well as its magnetoresistance up to 8 T. Our measurements indicate that the wires are good conductors in the temperature range investigated.

Keywords

arrays; bismuth; contact resistance; magnetoresistance; nanostructured materials; 200 nm; 30 nm; Bi; Bi wire array composites; array conductivity; contact resistance; magnetoresistance; porous anodic alumina; Bismuth; Chemistry; Contact resistance; Electrons; Insulation; Magnetic materials; Nanowires; Thermal conductivity; Thermoelectricity; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1999. Eighteenth International Conference on

Conference_Location

Baltimore, MD, USA

ISSN

1094-2734

Print_ISBN

0-7803-5451-6

Type

conf

DOI

10.1109/ICT.1999.843451

Filename

843451

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2008687