Title :
Junction temperature measurement of IGBTs using short circuit current
Author :
Xu, Zhuxian ; Wang, Fred ; Ning, Puqi
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
Abstract :
In this paper, a method is proposed to measure the junction temperatures of IGBT discrete devices and modules using short circuit current. Experimental results show that the short circuit current has good sensitivity, linearity and selectivity, which is suitable to be used as temperature sensitive electrical parameters (TSEP). Test circuit and hardware design are proposed for junction temperature measurement in single phase and three phase converters. By connecting a temperature measurement unit to the converter and giving a short circuit pulse, the IGBT junction temperature can be measured.
Keywords :
insulated gate bipolar transistors; power convertors; short-circuit currents; temperature measurement; IGBT discrete devices; hardware design; junction temperature measurement; short circuit current; single-phase converters; temperature sensitive electrical parameters; test circuit; three-phase converters; Calibration; Insulated gate bipolar transistors; Junctions; Logic gates; Short circuit currents; Temperature measurement; Temperature sensors;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
978-1-4673-0802-1
Electronic_ISBN :
978-1-4673-0801-4
DOI :
10.1109/ECCE.2012.6342837
