• DocumentCode
    2008701
  • Title

    Microstructure-property relations for porous bismuth films

  • Author

    Shen, W. ; Dunn, B. ; Ragot, F. ; Goorsky, M. ; Moore, C. ; Song, D.W. ; Chen, G. ; Gronsky, R. ; Radetic, T. ; Fuller-Mora, W. ; Ehrlich, A.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., California Univ., Los Angeles, CA, USA
  • fYear
    1999
  • fDate
    Aug. 29 1999-Sept. 2 1999
  • Firstpage
    562
  • Lastpage
    564
  • Abstract
    Metallorganic decomposition of metal carboxylates is used to prepare porous thin films of bismuth. The general approach is to spin coat a precursor solution, bismuth 2-ethylhexanoate in a solvent of 2-methyl-1-propanol on the substrate of interest and then pyrolyze the resulting film under conditions which evolve the organic ligands but do not melt the bismuth. The controlled release of ligands creates the nanoporous morphology which is then preserved in the final film. Subsequent plasma etching and heat treatments are used to produce films of variable porosity. The film microstructure consists of nanoporous channels separating grains of bismuth. For films in the range of 30 % porosity, thermal conductivity values are on the order of 0.35 W/mK. The interrelationships among processing conditions, microstructure and thermal conductivity are discussed.
  • Keywords
    bismuth; crystal microstructure; heat treatment; porosity; porous materials; semimetallic thin films; spin coating; sputter etching; thermal conductivity; 2-methyl-1-propanol; Bi; bismuth 2-ethylhexanoate; heat treatment; metallorganic decomposition; microstructure; nanoporous morphology; plasma etching; porosity; porous bismuth films; spin coating; thermal conductivity; thin films; Bismuth; Microstructure; Morphology; Nanoporous materials; Plasma applications; Solvents; Substrates; Thermal conductivity; Thermal variables control; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1999. Eighteenth International Conference on
  • Conference_Location
    Baltimore, MD, USA
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-5451-6
  • Type

    conf

  • DOI
    10.1109/ICT.1999.843452
  • Filename
    843452