Title :
Helium Irradiation for Advanced Lifetime Control in Silicon: New Recombination Centers and Their Interaction Stimulated by Isochronal Annealing
Author :
Komarnitskyy, Volodymyr ; Hazdra, Pavel
Author_Institution :
Dept. of Microelectron., Czech Tech. Univ., Prague
Abstract :
The article presents results of systematic investigation on annealing of radiation defects introduced into n-type oxygen-rich float-zone silicon by single (7 MeV) and double energy (7 and 7.6 MeV) alpha-particle irradiation with fluences form 8.5 times 108 to 1 times 1012 cm-2. Effect of isochronal anneal in the temperature range from 100 to 500degC on introduced defects and their interaction was studied by deep level transient spectroscopy. Shallow donor levels arising during annealing were investigated by C-V profiling. It is shown that formation of thermal donors (TDs) in the temperature range from 375 to 500degC is significantly enhanced by radiation damage (vacancy-oxygen clusters) produced by alpha-particle irradiation
Keywords :
alpha-particles; annealing; deep level transient spectroscopy; elemental semiconductors; helium; radiation effects; silicon; 100 to 500 C; 375 to 500 C; 7 MeV; 7.6 MeV; He; Si; advanced lifetime control; alpha-particle irradiation; deep level transient spectroscopy; helium irradiation; isochronal annealing; radiation damage; radiation defects; recombination centers; shallow donor levels; thermal donors; vacancy-oxygen clusters; Annealing; Control systems; Diodes; Helium; Monitoring; Photonic band gap; Silicon; Spectroscopy; Temperature distribution; Voltage;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
1-4244-0369-0
DOI :
10.1109/ASDAM.2006.331189
