DocumentCode :
2008784
Title :
Interconnect performance and energy-per-bit for post-CMOS logic circuits: Modeling, analysis, and comparison with CMOS logic
Author :
Rakheja, Shaloo ; Naeemi, Azad
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2011
fDate :
8-12 May 2011
Firstpage :
1
Lastpage :
3
Abstract :
To overcome the energy dissipation limit facing virtually all field-effect devices including CMOS switches, there is a global search for devices using alternate state variables as the token of information. In this paper, physical models for latency and energy dissipation associated with various transport mechanisms are reviewed. Using stochastic wire length distribution models based on Rent´s rule, the dependence of the average interconnect delay and energy dissipation on the number of gates in a circuit is obtained for alternative post-CMOS logic circuits. Further, it is demonstrated that the required number of repeaters increases rapidly with the circuit size if the token of information decays as it propagates (e.g. spin relaxation for electron spin). This puts an upper bound on the circuit size. For a spin relaxation length of Ls = 2μm, the maximum circuit size for random logic is limited to 40 gates if less than 10% of the switches are to be used as interconnect repeaters and if the signal amplitude at the driver is twice the receiver´s threshold. This maximum circuit size increases to 2000 gates if the spin relaxation length is increased to 8 μm at the same signal amplitude.
Keywords :
CMOS logic circuits; integrated circuit interconnections; integrated circuit modelling; CMOS switches; Rent rule; alternate state variables; energy dissipation; energy-per-bit; field-effect devices; interconnect performance; post-CMOS logic circuits; spin relaxation length; stochastic wire length distribution models; CMOS integrated circuits; Delay; Energy dissipation; Integrated circuit interconnections; Logic gates; Receivers; Repeaters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
ISSN :
pending
Print_ISBN :
978-1-4577-0503-8
Type :
conf
DOI :
10.1109/IITC.2011.5940267
Filename :
5940267
Link To Document :
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