DocumentCode :
2008820
Title :
Mechanism of resistivity decrease in networked-nanographite wires for multi-layer graphene interconnects
Author :
Sato, Motonobu ; Ogawa, Shuichi ; Inukai, Manabu ; Ikenaga, Eiji ; Muro, Takayuki ; Takakuwa, Yuji ; Nihei, Mizuhisa ; Yokoyama, Naoki
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear :
2011
fDate :
8-12 May 2011
Firstpage :
1
Lastpage :
3
Abstract :
We investigated the mechanism of resistivity decrease in networked-nanographite wires. The wires had no failure during over 200 hours under a current density of 5E5A/cm2 at about 400°C. However, their resistivity decreased gradually owing to thermal stress. Raman and x-ray photoelectron spectroscopy revealed that the decrease in resistivity can be attributed to an increase in sp2 bonding corresponding to the formation of a graphene sheet. It is important to clarify the mechanism for the decrease in resistivity, not only to improve thermal stability but also to obtain lower resistivity in carbon interconnects.
Keywords :
Raman spectroscopy; electrical resistivity; integrated circuit interconnections; nanotechnology; thermal stability; wires (electric); Raman spectroscopy; X-ray photoelectron spectroscopy; carbon interconnects; graphene sheet; multilayer graphene interconnects; networked-nanographite wires; resistivity; thermal stability; thermal stress; Annealing; Artificial neural networks; Conductivity; Films; Plasma temperature; Temperature measurement; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
ISSN :
pending
Print_ISBN :
978-1-4577-0503-8
Type :
conf
DOI :
10.1109/IITC.2011.5940268
Filename :
5940268
Link To Document :
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