Title :
Integration of dense CNTs in vias on 200mm diameter wafers: Study of post CNT growth processes
Author :
Fayolle, M. ; Lugand, JF ; Kachtouli, R. ; Okuno, H. ; Dijon, J. ; Gautier, P. ; Billon, T.
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
This paper presents the integration of dense (2.5 1012 CNTs/cm2) Carbon Nanotubes in via structures for future microelectronic interconnects generations. Process steps performed after CNT growth in vias are studied. Two different CNT encapsulation layers are evaluated (ALD Al2O3 and spin on resist). After polishing, well planarized CNTs vias structures are obtained in both cases. Post CMP clean is performed to improve CNT/top metal contact. Top metal realisation is on-going and electrical results will help to select which encapsulation is the best.
Keywords :
carbon nanotubes; chemical mechanical polishing; encapsulation; integrated circuit interconnections; mechanical contact; resists; ALD alumina; Al2O3; CMP clean; CNT encapsulation layers; carbon nanotubes; dense CNT; diameter wafers; microelectronic interconnects generations; planarized CNT; polishing; post CNT growth processes; size 200 mm; spin on resist; top metal contact; top metal realisation; via structures; vias; Aluminum oxide; Copper; Encapsulation; Resists; Silicon; Surface topography;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940269
