Integration of dense CNTs in vias on 200mm diameter wafers: Study of post CNT growth processes

Author

Fayolle, M. ; Lugand, JF ; Kachtouli, R. ; Okuno, H. ; Dijon, J. ; Gautier, P. ; Billon, T.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

This paper presents the integration of dense (2.5 10¹² CNTs/cm²) Carbon Nanotubes in via structures for future microelectronic interconnects generations. Process steps performed after CNT growth in vias are studied. Two different CNT encapsulation layers are evaluated (ALD Al₂O₃ and spin on resist). After polishing, well planarized CNTs vias structures are obtained in both cases. Post CMP clean is performed to improve CNT/top metal contact. Top metal realisation is on-going and electrical results will help to select which encapsulation is the best.

Keywords

carbon nanotubes; chemical mechanical polishing; encapsulation; integrated circuit interconnections; mechanical contact; resists; ALD alumina; Al₂O₃; CMP clean; CNT encapsulation layers; carbon nanotubes; dense CNT; diameter wafers; microelectronic interconnects generations; planarized CNT; polishing; post CNT growth processes; size 200 mm; spin on resist; top metal contact; top metal realisation; via structures; vias; Aluminum oxide; Copper; Encapsulation; Resists; Silicon; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940269

Filename

5940269