Title :
Dark current of AlGaAs/GaAs n-QWIP prepared on patterned (001) GaAs substrate by MOVPE
Author :
Strichovanec, P. ; Kudela, R. ; Vavra, I. ; Srnánek, R. ; Novak, Jiri
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava
Abstract :
A 400mum times 400mum sized square quantum-well infrared photodetector with 30 periods of the GaAs/Al0.3Ga0.7 As multiple quantum well has been prepared on patterned (001) GaAs substrate. The absorption spectrum at room temperature with normal incidence geometry is peaked at 9mum with a full width at half maximum (FWHM) of 3.7 mum. Dark current with influence of 300K background was measured at room temperature and at 77K
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; infrared detectors; photodetectors; semiconductor quantum wells; (001) GaAs; 300 K; 77 K; AlGaAs-GaAs; MOVPE; absorption spectrum; dark current; metalorganic chemical vapor deposition; quantum-well infrared photodetector; Current measurement; Dark current; Electromagnetic wave absorption; Epitaxial growth; Epitaxial layers; Gallium arsenide; Geometry; Photodetectors; Quantum well devices; Temperature measurement;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
1-4244-0369-0
DOI :
10.1109/ASDAM.2006.331196
