Title :
Improvement of RC performance for advanced ULK/Cu interconnects with CVD hybrid dielectric/metal liner
Author :
Tagami, M. ; Yang, C.-C. ; Shobha, H. ; Soda, E. ; Madan, A. ; DeHaven, P. ; Murphy, R. ; Davis, R. ; Parks, C. ; Molis, S. ; Cohen, S. ; Ito, F. ; Spooner, T.
Author_Institution :
Renesas Electron., Albany, NY, USA
Abstract :
A CVD-hybrid dielectric/metal liner has been demonstrated by simulation and actual structure. From line resistance (R) and line capacitance (C) simulation, the CVD-hybrid liner deposited on porous ULK (k=2.2) inter layer dielectrics (ILD) is shown that it is possible to improve RC performance. The CVD-hybrid liner with CVD-SiCN and CVD-Ru shows good liner conformality, Cu diffusion barrier property and oxidation barrier property. Integration process is investigated to achieve optimum CVD-hybrid liner structure with special RIE technique. 14.6% RC performance improvement can be achieved with triple-layered ULK(k=2.2)/Cu integrated interconnect structure. The CVD-hybrid liner is a strong candidate to achieve a better RC performance for future technology nodes.
Keywords :
RC circuits; capacitance; chemical vapour deposition; copper; dielectric materials; electric resistance; integrated circuit interconnections; porous materials; ruthenium compounds; silicon compounds; CVD hybrid dielectric/metal liner; Cu; RC performance; RIE technique; SiCN; ULK/Cu interconnect; diffusion barrier property; integrated interconnect structure; integration process; line capacitance; line resistance; oxidation barrier property; porous interlayer dielectrics; triple-layered ULK; Capacitance; Copper; Dielectrics; Materials; Resistance; Surface morphology;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940274
