Thermal and spatial dependence of TSV-induced stress in Si

Author

McDonough, C. ; Backes, B. ; Wang, W. ; Caramto, R. ; Geer, R.E.

Author_Institution

Coll. of Nanoscale Sci. & Eng., Univ. at Albany, Albany, NY, USA

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

The thermal and spatial variation of Cu TSV-induced stress has been investigated for 1×4 arrays of 5 μm diameter × 50 μm TSVs using microRaman imaging. Following post-CMP annealing the measured Si Raman shift outside the TSV array is slightly modified. In strong contrast, the Si Raman shift midway between TSVs transitions from a tensile to compressive state as the annealing temperature increases. Topographic analysis implies this shift is associated with thermally-induced Cu extrusion.

Keywords

annealing; chemical mechanical polishing; copper; elemental semiconductors; integrated circuit interconnections; silicon; three-dimensional integrated circuits; CMP annealing; Cu; Cu TSV-induced stress; Cu extrusion; Si; Si Raman shift; compressive state; microRaman imaging; silicon; spatial variation; tensile state; thermal variation; topographic analysis; Annealing; Copper; Silicon; Strain; Stress; Thermal stresses; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940275

Filename

5940275