Orthotropic stress field induced by TSV and its impact on device performance

Author

Hsieh, C.C. ; Teng, H.A. ; Jeng, S.P. ; Jan, S.B. ; Chen, M.F. ; Chang, J.H. ; Chang, C.H. ; Yang, K.F. ; Lin, Y.C. ; Wu, T.J. ; Chiou, W.C. ; Hou, S.Y. ; Yu, Doug C H

Author_Institution

R&D, Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

An orthotropic stress field was observed in the vicinity of the Cu-filled TSV on nominal (100) silicon substrate from both μRaman measured data and validated FEM result. The orthotropic elastic behavior of silicon in the (100) plane is believed to be the reason. The FEM model was further validated by the comparison with the measured electrical data, and used to predict the device performance shift under the influence of the TSV-induced stress. The performance shift pattern also showed an orthotropic pattern. This finding has profound implication on 3D silicon stacking design rule and system integration.

Keywords

copper; finite element analysis; silicon; stacking; three-dimensional integrated circuits; 3D silicon stacking; Cu; Cu-filled TSV; FEM model; Si; device performance; microRaman measured data; nominal silicon substrate; orthotropic elastic behavior; orthotropic pattern; orthotropic stress field; Annealing; Copper; MOS devices; Performance evaluation; Silicon; Stress; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940276

Filename

5940276