Title :
ZrBO dielectrics for TSV production process
Author :
Hatanaka, Masanobu ; Shibata, Akihiro ; Harada, Masamichi ; Toyoda, Satoru ; Ishikawa, Michio ; Suu, Koukou
Author_Institution :
Inst. of Semicond. & Electron. Technol., ULVAC, Inc., Shizuoka, Japan
Abstract :
Dielectric films of ZrBO were grown using thermal-CVD Zr(BH4)4-O2 gas system. Oxygen gas was activated by microwave to produce its radical. The grown film showed high barrier properties for Cu diffusion with a thickness of 50 nm. Typical side step coverage was over 60% for a 45-μm-deep and 7.5-aspect-ratio TSV with a high coverage of 67% at the bottom. We report ZrBO-CVD mechanism related to the coverage.
Keywords :
boron compounds; chemical vapour deposition; copper; dielectric thin films; diffusion barriers; three-dimensional integrated circuits; zirconium compounds; TSV production process; ZrBO-Cu; barrier property; depth 45 mum; dielectric film; size 50 nm; thermal-CVD gas system; Dielectric constant; Films; Plasma temperature; Temperature dependence; Temperature distribution; Through-silicon vias;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940277
