• DocumentCode
    2009015
  • Title

    ZrBO dielectrics for TSV production process

  • Author

    Hatanaka, Masanobu ; Shibata, Akihiro ; Harada, Masamichi ; Toyoda, Satoru ; Ishikawa, Michio ; Suu, Koukou

  • Author_Institution
    Inst. of Semicond. & Electron. Technol., ULVAC, Inc., Shizuoka, Japan
  • fYear
    2011
  • fDate
    8-12 May 2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Dielectric films of ZrBO were grown using thermal-CVD Zr(BH4)4-O2 gas system. Oxygen gas was activated by microwave to produce its radical. The grown film showed high barrier properties for Cu diffusion with a thickness of 50 nm. Typical side step coverage was over 60% for a 45-μm-deep and 7.5-aspect-ratio TSV with a high coverage of 67% at the bottom. We report ZrBO-CVD mechanism related to the coverage.
  • Keywords
    boron compounds; chemical vapour deposition; copper; dielectric thin films; diffusion barriers; three-dimensional integrated circuits; zirconium compounds; TSV production process; ZrBO-Cu; barrier property; depth 45 mum; dielectric film; size 50 nm; thermal-CVD gas system; Dielectric constant; Films; Plasma temperature; Temperature dependence; Temperature distribution; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
  • Conference_Location
    Dresden
  • ISSN
    pending
  • Print_ISBN
    978-1-4577-0503-8
  • Type

    conf

  • DOI
    10.1109/IITC.2011.5940277
  • Filename
    5940277
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2009015