Title :
Distributed and coupled electrothermal model of power semiconductor devices
Author :
Belkacem, G. ; Labrousse, D. ; Lefebvre, S. ; Joubert, P-Y ; Kuhne, U. ; Fribourg, L. ; Soulat, R. ; Florentin, E. ; Rey, C.
Author_Institution :
SATIE, ENS Cachan, Cachan, France
Abstract :
Electro-thermal model of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors (COOLMOS™) based on the coupling between two computation softwares (Matlab and Cast3M) is described in the paper. The elaborated 2D electro-thermal model is able to predict i) the temperature distribution on chip surface well as in volume, ii) the effect of the temperature on the distribution of the current flowing within the die and iii) the effects of the ageing of the metallization layer on the current density and the temperature. In the paper, the used electrical and thermal models are described as well as the implemented coupling scheme.
Keywords :
ageing; power MOSFET; power semiconductor devices; semiconductor device metallisation; semiconductor device reliability; temperature distribution; 2D electrothermal model; COOLMOS; Cast3M; Matlab; ageing; chip surface; computation softwares; coupled electrothermal model; current density; distributed electrothermal model; metallization layer; power MOSFET transistors; power semiconductor devices; reliability; temperature distribution; thermal design; Aluminum; Computational modeling; Logic gates; Mathematical model; Metallization; Semiconductor device modeling; Transistors; Ageing of power semiconductor devices; Degradation of the metallization layer; Electro-thermal model; Power semiconductor transistors; Short circuit;
Conference_Titel :
Renewable Energies and Vehicular Technology (REVET), 2012 First International Conference on
Conference_Location :
Hammamet
Print_ISBN :
978-1-4673-1168-7
DOI :
10.1109/REVET.2012.6195253
