NiSi nano-contacts to strained and unstrained silicon nanowires

Author

Habicht, S. ; Zhao, Q.T. ; Feste, S.F. ; Knoll, L. ; Trellenkamp, S. ; Bourdelle, K.K. ; Mantl, S.

Author_Institution

Peter Grunberg Inst. 9 (PGI 9), Forschungszentrum Julich, Jülich, Germany

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

Nano-contacts of NiSi to n⁺ and p⁺ doped strained and unstrained Si nanowires (NWs) were studied. Several Ni silicide phases were found: Ni₂Si formed under the Ni electrodes, Ni₃Si very close to the Ni electrodes, while NiSi was observed along the Si NWs. The NiSi nanowire length decreases with increasing wire cross section A. The silicidation speed along the Si NW shows a linear relation to 1/A, indicating volume silicidation of the Si NW. Uniaxial strain seems to have no effect on the silicidation speed. Contact resistivities as low as 1.2 × 10^-8 Ω·cm² were obtained for NiSi contacts to both, strained and unstrained Si nanowires.

Keywords

electrochemical electrodes; nanowires; nickel alloys; silicon alloys; NiSi; NiSi nanocontacts; contact resistivity; nickel electrodes; silicidation speed; unstrained silicon nanowires; volume silicidation; wire cross section; Annealing; Conductivity; Electrodes; Nickel; Silicidation; Silicides; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940282

Filename

5940282