Title :
Measurement system for doping and alloying trends in new thermoelectric materials
Author :
Hogan, T. ; Ghelani, N. ; Loo, S. ; Sportouch, S. ; Kim, S.-J. ; Chung, D-Y. ; Kanatzidis, M.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI, USA
fDate :
Aug. 29 1999-Sept. 2 1999
Abstract :
Several new materials in the A/sub 2/Bi/sub 8/Se/sub 13/, (A=K, Rb, Cs), HoNiSb, Ba/Ge/B (B=In, Sn), and AgPbBiQ/sub 3/ (Q=S, Se, Te) systems have shown promising characteristics for thermoelectric applications. To accommodate the large number of samples required for doping and alloying studies, a new measurement system has been designed with a high sample throughput. A second system is then utilized for complete characterization of the most promising samples. This paper presents a description of the systems and measurement techniques involved, with preliminary data on some of the above mentioned compounds.
Keywords :
antimony alloys; barium alloys; bismuth alloys; caesium alloys; germanium alloys; holmium alloys; indium alloys; lead alloys; nickel alloys; potassium alloys; rubidium alloys; silver alloys; thermoelectric power; tin alloys; AgPbBiS/sub 3/; AgPbBiSe/sub 3/; AgPbBiTe/sub 3/; Ba-Ge-In; Ba-Ge-Sn; Ba/Ge/In; Ba/Ge/Sn; Cs/sub 2/Bi/sub 8/Se/sub 13/; HoNiSb; K/sub 2/Bi/sub 8/Se/sub 13/; Rb/sub 2/Bi/sub 8/Se/sub 13/; alloying trends; doping trends; thermoelectric materials; Alloying; Conductivity measurement; Doping; Electric variables measurement; Power measurement; Temperature; Testing; Thermal conductivity; Thermoelectricity; Time measurement;
Conference_Titel :
Thermoelectrics, 1999. Eighteenth International Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-5451-6
DOI :
10.1109/ICT.1999.843476
