Highly reliable Enhanced Nitride Interface (ENI) process of barrier Low-k using absorption-free Ultra-Thin SiN (UT-SiN)

Author

Usami, T. ; Miura, Y. ; Nakamur, T. ; Tsuchiya, H. ; Kobayashi, C. ; Ohto, K. ; Hiroshima, S. ; Tanaka, M. ; Kunishima, H. ; Ishizuka, I. ; Kuwajima, T. ; Sakurai, M. ; Yokogawa, S. ; Fujii, K.

Author_Institution

Renesas Electron. Corp., Yamagata, Japan

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

A highly reliable Enhanced Nitride Interface (ENI) process of barrier Low-k using an Ultra-Thin SiN (UT-SiN) has been developed for 40-nm node and beyond. The UT-SiN (3nm) has a good thickness uniformity and a good stability against absorption. By using this technique, a lower effective k and good via yields were obtained. In addition, 5x via electro-migration (EM) improvement, 50x TDDB and no SIV failure by 1000h were obtained in comparison to the conventional SiCN bi-layer process. And the ENI was analyzed by XPS and TOF-SIMS. According to these analyses, the mechanism for performance enhancement is proposed.

Keywords

absorption; electromigration; low-k dielectric thin films; silicon compounds; ENI process; UT-SiN; absorption-free ultra-thin SiN; barrier low-k films; electro-migration improvement; enhanced nitride interface process; Copper; Dielectrics; Films; Moisture; Silicon; Silicon compounds; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940288

Filename

5940288