Title :
Highly reliable Enhanced Nitride Interface (ENI) process of barrier Low-k using absorption-free Ultra-Thin SiN (UT-SiN)
Author :
Usami, T. ; Miura, Y. ; Nakamur, T. ; Tsuchiya, H. ; Kobayashi, C. ; Ohto, K. ; Hiroshima, S. ; Tanaka, M. ; Kunishima, H. ; Ishizuka, I. ; Kuwajima, T. ; Sakurai, M. ; Yokogawa, S. ; Fujii, K.
Author_Institution :
Renesas Electron. Corp., Yamagata, Japan
Abstract :
A highly reliable Enhanced Nitride Interface (ENI) process of barrier Low-k using an Ultra-Thin SiN (UT-SiN) has been developed for 40-nm node and beyond. The UT-SiN (3nm) has a good thickness uniformity and a good stability against absorption. By using this technique, a lower effective k and good via yields were obtained. In addition, 5x via electro-migration (EM) improvement, 50x TDDB and no SIV failure by 1000h were obtained in comparison to the conventional SiCN bi-layer process. And the ENI was analyzed by XPS and TOF-SIMS. According to these analyses, the mechanism for performance enhancement is proposed.
Keywords :
absorption; electromigration; low-k dielectric thin films; silicon compounds; ENI process; UT-SiN; absorption-free ultra-thin SiN; barrier low-k films; electro-migration improvement; enhanced nitride interface process; Copper; Dielectrics; Films; Moisture; Silicon; Silicon compounds; Stress;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940288
