CVD Co capping layers for Cu/low-k interconnects: Cu EM enhancement vs. Co thickness

Author

Yang, C. -C ; Baumann, F. ; Wang, P.-C. ; Lee, SY ; Ma, P. ; AuBuchon, J. ; Edelstein, D.

Author_Institution

IBM Res., Albany, NY, USA

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

Co films with various thicknesses were selectively deposited as Cu capping layers by chemical vapor deposition technique. Selectivity of the Co deposition between Cu and dielectric surfaces was improved by both raising the deposition pressure and adopting a pre-clean process prior to the Co deposition. Degree of electromigration resistance enhancement was observed to be dependent on the deposited Co thickness. Compared to the no-Co control, significant EM lifetime enhancement was observed when the Co cap is thicker than 6nm.

Keywords

chemical vapour deposition; cobalt; copper; electromigration; integrated circuit interconnections; CVD capping layer; Co; Cu; EM enhancement; chemical vapor deposition technique; deposition pressure; dielectric surfaces; electromigration resistance enhancement; low-k interconnects; Copper; Dielectrics; Process control; Resistance; Surface treatment; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940289

Filename

5940289