Title :
Copper Interconnection with Tungsten Cladding for UlSI
Author :
Cho, J.S.H. ; Kang, H-K. ; Beiley, M.A. ; Wong, S. Simon
Author_Institution :
Stanford University, CA
Keywords :
Copper; Degradation; Dry etching; Electromigration; Integrated circuit interconnections; Metallization; Plugs; Temperature; Tungsten; Ultra large scale integration;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.705979