Impact of low-k moisture absorption during queue-time on Cu-alloy/low-k reliability and its suppression

Author

Tsuchiya, H. ; Yokogawa, S. ; Kunishima, H. ; Kuwajima, T. ; Usami, T. ; Miura, Y. ; Ohto, K. ; Fujii, K. ; Sakurai, M.

Author_Institution

Renesas Electron. Corp., Sagamihara, Japan

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

The moisture absorption impacts on electromigration (EM) and time-dependent dielectric breakdown (TDDB) were investigated in Cu alloy/low-k interconnects. A long queue time (Q-time) has a serious impact on kinetics of both EM and TDDB characteristics. The moisture absorption causes the loss of alloy effects on EM lifetime improvements. The ultra-thin SiN (UT-SiN) remarkably suppresses the moisture absorption impacts due to Q-time. It also improves kinetics degradations of EM and TDDB that depend on the moisture absorption to low-k.

Keywords

copper alloys; electric breakdown; electromigration; low-k dielectric thin films; moisture; semiconductor device reliability; silicon compounds; wide band gap semiconductors; SiN; electromigration; low-k interconnects; low-k moisture absorption; low-k reliability; time-dependent dielectric breakdown; Absorption; Copper; Degradation; Dielectrics; Kinetic theory; Moisture;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940293

Filename

5940293