Title :
Impact of low-k moisture absorption during queue-time on Cu-alloy/low-k reliability and its suppression
Author :
Tsuchiya, H. ; Yokogawa, S. ; Kunishima, H. ; Kuwajima, T. ; Usami, T. ; Miura, Y. ; Ohto, K. ; Fujii, K. ; Sakurai, M.
Author_Institution :
Renesas Electron. Corp., Sagamihara, Japan
Abstract :
The moisture absorption impacts on electromigration (EM) and time-dependent dielectric breakdown (TDDB) were investigated in Cu alloy/low-k interconnects. A long queue time (Q-time) has a serious impact on kinetics of both EM and TDDB characteristics. The moisture absorption causes the loss of alloy effects on EM lifetime improvements. The ultra-thin SiN (UT-SiN) remarkably suppresses the moisture absorption impacts due to Q-time. It also improves kinetics degradations of EM and TDDB that depend on the moisture absorption to low-k.
Keywords :
copper alloys; electric breakdown; electromigration; low-k dielectric thin films; moisture; semiconductor device reliability; silicon compounds; wide band gap semiconductors; SiN; electromigration; low-k interconnects; low-k moisture absorption; low-k reliability; time-dependent dielectric breakdown; Absorption; Copper; Degradation; Dielectrics; Kinetic theory; Moisture;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940293
