Backend-of-line reliability improvement options for 28nm node technologies and beyond

Author

Aubel, O. ; Hennesthal, C. ; Hauschildt, M. ; Beyer, A. ; Poppe, J. ; Talut, G. ; Gall, M. ; Hahn, J. ; Boemmels, J. ; Nopper, M. ; Seidel, R.

Author_Institution

Quality & Reliability Eng., GLOBALFOUNDRIES Dresden Module One LLC & Co. KG, Dresden, Germany

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

This paper reviews the most encouraging process options for improving backend-of-line reliability performance in advanced technology nodes. Metal capping yields the best electromigration performance; however, this process is most challenging with respect to integration and may also suffer from significantly decreasing grain sizes in trench bottoms for future technologies. Furthermore, time-dependent dielectric breakdown has to be carefully evaluated. Alloying or silicidation techniques are less challenging to implement but can result in unacceptably high resistance increases. We analyze the respective results for each option and compare the performance on 45, 32, and 28 nm technology nodes. In addition to electromigration and time-dependent dielectric breakdown, the impact of the various process options on stress migration performance is discussed.

Keywords

electric breakdown; electromigration; integrated circuit reliability; backend-of-line reliability; dielectric breakdown; electromigration; grain size; metal capping; node technology; silicidation; size 28 nm; size 32 nm; size 45 nm; stress migration; trench bottoms; Alloying; Copper; Electromigration; Resistance; Silicidation; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940295

Filename

5940295