DocumentCode :
20095
Title :
Microstructure and dielectric behavior of Bi2O3-doped KSr2Nb5O15 ceramics
Author :
Guoxin Hu ; Feng Gao ; Liangliang Liu ; Zhenqi Deng ; Zhengtang Liu
Author_Institution :
State Key Lab. of Solidification Process., Northwestern Polytech. Univ., Xi´an, China
Volume :
60
Issue :
7
fYear :
2013
fDate :
Jul-13
Firstpage :
1287
Lastpage :
1294
Abstract :
Bi2O3-doped KSr2Nb5O15(KSNB) ceramics with relative density higher than 96% were successfully prepared by sintering at 1300°C. The addition of Bi2O3 will decrease the tetragonal degree of the materials, improve the densification, and promote the grain growth of KSNB ceramics. Relaxation behavior can be observed in KSNB ceramics, which is attributed to the complex response of the polar nanoregions and matrices resulting from substitution of Bi3+ for Sr2+ and K+. Bi2O3-doped KSr2Nb5O15 ceramics show good temperature-dependence performance and high dielectric tunability. KSNB ceramics with 4.0 wt% added Bi2O3 show the maximum tunability, and capacitance changes with temperature meet the requirement of the X7R standard, which makes these ceramics promising candidate materials for multilayer capacitors and tunable phase shifters.
Keywords :
bismuth compounds; dielectric relaxation; ferroelectric ceramics; grain growth; potassium compounds; sintering; strontium compounds; KSr2Nb5O15:Bi2O3; capacitance; ceramics; densification; dielectric relaxation; dielectric tunability; grain growth; matrices; microstructure; multilayer capacitors; polar nanoregions; sintering; temperature 1300 degC; temperature dependence performance; tunable phase shifters;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2013.2703
Filename :
6552381
Link To Document :
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