Title :
Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode
Author :
Chen, Y.Y. ; Goux, L. ; Pantisano, L. ; Swerts, J. ; Adelmann, C. ; Mertens, S. ; Afanasiev, V.V. ; Wang, X.P. ; Govoreanu, B. ; Degraeve, R. ; Kubicek, S. ; Paraschiv, V. ; Verbrugge, B. ; Jossart, N. ; Altimime, L. ; Jurczak, M. ; Kittl, J. ; Groeseneke
Author_Institution :
Imec, Leuven, Belgium
Abstract :
In this work, (1) we propose a new, simpler, and fully CMOS-compatible TiNHfO2TiN material stack, using PEALD TiN which after plasma optimization results in functional cells down to 2275nm2 (35nm×65nm), (2) we demonstrate stable switching between resistances >;105Ω using a low program current of ~1μA, where the 105Ω-resistive LRS state shows good retention at high temperature, projected to 10 years stability at 80°C.
Keywords :
CMOS memory circuits; atomic layer deposition; random-access storage; CMOS-compatible TiNHfO2TiN material stack; PEALD TiN; TiN electrode; TiN-HfO2-TiN; fully CMOS BEOL compatible HfO2 RRAM cell; high scalability; low program current; optimized plasma enhanced atomic layer deposition process; plasma optimization; strong retention; Argon; Optical switches; Plasmas; Resistance; Thermal stability; Tin;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940299
