Title :
Process and RF modelling of TSV last approach for 3D RF interposer
Author :
Fuchs, C. ; Charbonnier, J. ; Cheramy, S. ; Cadix, L. ; Henry, D. ; Chausse, P. ; Hajji, O. ; Farcy, A. ; Garnier, G. ; Brunet-Manquat, C. ; Diaz, J. ; Anciant, R. ; Vincent, P. ; Sillon, N. ; Ancey, P.
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
In this paper, high density TSV integration in silicon interposer is presented, fully characterized and simulated (DC and RF). Parasitic elements of the RF model are extracted. Dielectric and metal process improvements are developed and their impact on TSV RF behaviour is evaluated. At least, silicon resistivity effect on TSV RF performances is demonstrated.
Keywords :
dielectric materials; electrical resistivity; elemental semiconductors; integrated circuit modelling; radiofrequency integrated circuits; silicon; three-dimensional integrated circuits; 3D RF interposer; RF modelling; TSV RF behaviour; TSV RF performances; dielectric process improvement; high density TSV integration; metal process improvement; parasitic elements; resistivity effect; silicon interposer; Copper; Radio frequency; Silicon; Solid modeling; Substrates; Three dimensional displays; Through-silicon vias;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940301
