Photo-imageable spin-on dielectrics for TSV 3D packaging applications

Author

Zhang, Ruzhi Mike ; Lee, Chien-Hsien Sam ; Wolfer, Elizabeth ; Nagahara, Tatsuro

Author_Institution

AZ Electron. Mater., Somerville, NJ, USA

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

Photo-imageable spin-on dielectrics (PSOD) with low dielectric constant were developed for TSV 3D packaging applications. Negative-tone PSOD with high resolution was devised to afford patterned dielectrics through simplified process, i.e. lithography and thermal annealing, in comparison to conventional CVD/Lithography/DRIE integration process. All processes employed in the PSOD fabrication are performed at low temperature (≤200°C) in order to meet the relatively low temperature constraints from conventional packaging materials.

Keywords

annealing; chemical vapour deposition; dielectric materials; integrated circuit packaging; lithography; permittivity; sputter etching; three-dimensional integrated circuits; CVD; DRIE integration process; PSOD fabrication; TSV 3D packaging; dielectric constant; lithography; patterned dielectrics; photoimageable spin-on dielectrics; thermal annealing; Dielectrics; Lithography; Packaging; Silicon; Thermal stability; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940311

Filename

5940311