Investigation of electrical programmable metal fuse in 28nm and beyond CMOS technology

Author

Wu, Kuei-Sheng ; Tseng, Ching-Hsiang ; Wong, Chang-Chien ; Chi, Sinclair ; Su, Titan ; Liu, Yensong ; Wei, Huan-Sheng ; Lien, Wai Yi ; Chen, Chuck

Author_Institution

United Microelectron. Corp., Sinshih Township, Taiwan

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

Minimum blowing current and thermal reliability of metal fuse were studied on various lengths of top and bottom metal line. By optimizing the length of top metal line, the programming current window can be extended. Next to optimize the length of bottom metal line, enough metal void size formed by thermally assisted electro-migration can be obtained in the bottom metal line and the metal void is far away from via bottom enabling highly stable operation. We think metal fuse technology is indispensable for the 28nm technology node and beyond with the introduction of metal gate/high-k process.

Keywords

CMOS integrated circuits; electric fuses; electromigration; integrated circuit reliability; programmable circuits; CMOS technology; blowing current; electrical programmable metal fuse; metal gate/high-k process; metal line; metal void size; programming current window; size 28 nm; thermal reliability; thermally assisted electro-migration; Copper; Driver circuits; High K dielectric materials; Logic gates; RNA; Stress; Thermal analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940312

Filename

5940312