Title :
Investigation of electrical programmable metal fuse in 28nm and beyond CMOS technology
Author :
Wu, Kuei-Sheng ; Tseng, Ching-Hsiang ; Wong, Chang-Chien ; Chi, Sinclair ; Su, Titan ; Liu, Yensong ; Wei, Huan-Sheng ; Lien, Wai Yi ; Chen, Chuck
Author_Institution :
United Microelectron. Corp., Sinshih Township, Taiwan
Abstract :
Minimum blowing current and thermal reliability of metal fuse were studied on various lengths of top and bottom metal line. By optimizing the length of top metal line, the programming current window can be extended. Next to optimize the length of bottom metal line, enough metal void size formed by thermally assisted electro-migration can be obtained in the bottom metal line and the metal void is far away from via bottom enabling highly stable operation. We think metal fuse technology is indispensable for the 28nm technology node and beyond with the introduction of metal gate/high-k process.
Keywords :
CMOS integrated circuits; electric fuses; electromigration; integrated circuit reliability; programmable circuits; CMOS technology; blowing current; electrical programmable metal fuse; metal gate/high-k process; metal line; metal void size; programming current window; size 28 nm; thermal reliability; thermally assisted electro-migration; Copper; Driver circuits; High K dielectric materials; Logic gates; RNA; Stress; Thermal analysis;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940312
