DocumentCode :
2009904
Title :
New dimensionless number for superhydrophobicity study of micron/submicron patterned surfaces
Author :
Chen, Longquan ; Lee, Yi-Kuen
Author_Institution :
Dept. of Mech. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
fYear :
2010
fDate :
24-28 Jan. 2010
Firstpage :
1051
Lastpage :
1054
Abstract :
This paper reports a systematic study of geometric effect of roughness on hydrophobicity by a series of post arrays ranging from several hundreds microns to submicron. These devices were fabricated using projection/contact photolithography and etched by Deep RIE with different heights. A 1 ¿m parylene C layer was then deposited on these devices to improve hydrophobicity and the apparent contact angles were measured. It was found that the apparent contact angle increases with increasing the height of posts and there is a best diameter for each series of devices with a same spacing. With the help of dimensional analysis, all the measured apparent contact angles can be collapsed by a new dimensionless number, Bulk Aspect Ratio (BAR). In addition to a small solid fraction, the superhydrophobic surfaces were found with a bulk aspect ratio larger than 4.
Keywords :
contact angle; hydrophobicity; photolithography; sputter etching; bulk aspect ratio; contact angle; deep RIE; dimensionless number; micron-submicron patterned surface; projection-contact photolithography; reactive ion etching; superhydrophobicity; Etching; Fabrication; Goniometers; Lithography; Micromechanical devices; Resists; Rough surfaces; Silicon; Solids; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on
Conference_Location :
Wanchai, Hong Kong
ISSN :
1084-6999
Print_ISBN :
978-1-4244-5761-8
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2010.5442390
Filename :
5442390
Link To Document :
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