Title :
Process integration of iALD TaN for advanced Cu interconnects
Author :
Wu, Hui-Jung ; Gopinath, Sanjay ; Jow, Kenneth ; Kuo, Emery ; Lu, Victor ; Park, Kie-Jin ; Shaviv, Roey ; Mountsier, Tom ; Dixit, Girish
Author_Institution :
Novellus Syst., Inc., San Jose, CA, USA
Abstract :
A high density/low resistivity TaN film grown using ion-induced atomic layer deposition (iALD) has been developed as the metal barrier for nano-scale Cu interconnects. Excellent conformalilty and Cu barrier performance enable the use of thin iALD TaN as the metal barrier. Integration of this film has demonstrated improvement in line and via resistance while maintaining robust electromigration (EM), via stress migration (VSM), and dielectric reliability performance.
Keywords :
atomic layer deposition; copper; electrical resistivity; electromigration; integrated circuit interconnections; integrated circuit reliability; low-k dielectric thin films; nanoelectronics; tantalum compounds; Cu; Cu barrier performance; TaN; dielectric reliability performance; electromigration; high density TaN film; iALD TaN; ion-induced atomic layer deposition; low resistivity TaN film; metal barrier; nanoscale Cu interconnects; process integration; stress migration; Annealing; Copper; Dielectrics; Films; Reliability; Resistance;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940316
