DocumentCode :
2009952
Title :
Helium implanted silicon waveguide photodetectors for optical power monitors
Author :
Liu, Y. ; Chow, C.W. ; Cheung, W.Y. ; Tsang, H.K.
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, China
fYear :
2006
fDate :
5-10 March 2006
Abstract :
The enhanced photo-response of helium ion implanted silicon waveguides as a function of different anneal temperatures and durations is reported. The enhancement in responsivity at communication wavelength was sufficient for use as optical power monitors.
Keywords :
annealing; elemental semiconductors; helium; ion implantation; monitoring; optical communication equipment; optical waveguides; photodetectors; silicon; Si:He; annealing; helium implantation; optical power monitors; photodetectors; silicon waveguide; Annealing; Helium; Optical losses; Optical waveguides; Particle beam optics; Photoconductivity; Photodetectors; Photonic band gap; Silicon; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication Conference, 2006 and the 2006 National Fiber Optic Engineers Conference. OFC 2006
Print_ISBN :
1-55752-803-9
Type :
conf
DOI :
10.1109/OFC.2006.215562
Filename :
1636593
Link To Document :
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