Title :
Comparison of electrical performances of metal-insulator-metal capacitors with sputtered HfO2 and BZT-HfO2 dielectrics
Author :
Zhang, Li-Feng ; Xu, Hui ; Zhang, Qiu-Xiang ; Ding, Shi-Jin ; Zhang, David Wei
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
Sputtered HfO2 and co-sputtered BZT-HfO2 dielectrics have been compared for high density metal-insulator-metal (MIM) capacitors, which are required for radio frequency and analog/mixed-signal integrated circuits. The MIM capacitor with BZT-HfO2 shows a high permittivity value of 20.8, and the small quadratic voltage coefficient of capacitance of 1830 ppm/V2 at 100kHz compared to that with HfO2 dielectric. Further, the leakage characteristics of the capacitors with HfO2 and BZT-HfO2 dielectrics have been studied as a function of measurement temperature, and the conduction mechanisms are discussed.
Keywords :
MIM devices; analogue integrated circuits; barium compounds; capacitors; hafnium compounds; mixed analogue-digital integrated circuits; permittivity; sputter deposition; Ba(Zr0.20Ti0.80)O3-HfO2; analog/mixed-signal integrated circuits; electrical performances; measurement temperature; metal-insulator-metal capacitors; radio frequency; Capacitance; Capacitors; Current measurement; Films; MIM capacitors; Temperature measurement;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940318
