Comparison of electrical performances of metal-insulator-metal capacitors with sputtered HfO2 and BZT-HfO2 dielectrics

Author

Zhang, Li-Feng ; Xu, Hui ; Zhang, Qiu-Xiang ; Ding, Shi-Jin ; Zhang, David Wei

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai, China

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

Sputtered HfO₂ and co-sputtered BZT-HfO₂ dielectrics have been compared for high density metal-insulator-metal (MIM) capacitors, which are required for radio frequency and analog/mixed-signal integrated circuits. The MIM capacitor with BZT-HfO₂ shows a high permittivity value of 20.8, and the small quadratic voltage coefficient of capacitance of 1830 ppm/V² at 100kHz compared to that with HfO₂ dielectric. Further, the leakage characteristics of the capacitors with HfO₂ and BZT-HfO₂ dielectrics have been studied as a function of measurement temperature, and the conduction mechanisms are discussed.

Keywords

MIM devices; analogue integrated circuits; barium compounds; capacitors; hafnium compounds; mixed analogue-digital integrated circuits; permittivity; sputter deposition; Ba(Zr_0.20Ti_0.80)O₃-HfO₂; analog/mixed-signal integrated circuits; electrical performances; measurement temperature; metal-insulator-metal capacitors; radio frequency; Capacitance; Capacitors; Current measurement; Films; MIM capacitors; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940318

Filename

5940318