Temporal instability of suppressor ensembles under reactive conditions

Author

Fluegel, A. ; Arnold, M. ; Wagner, A. ; Mayer, D. ; Hai, M.N.T. ; Trung, H.T.M. ; Odermatt, J. ; Broekmann, P.

Author_Institution

Electron. Mater., BASF SE, Ludwigshafen, Germany

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

The temporal instability of different types of suppressor additives relevant for Damascene and 3D-TSV copper electroplating is studied by means of potential transient experiments in combination with structure sensitive methods such as in-situ scanning tunneling microscopy and in-situ synchrotron x-ray diffraction. The molecular interplay of various types of suppressor additives with their specific antagonists at the copper/electrolyte interface is discussed in the light of the successful fill of sub-50nm Damascene features and μm-sized 3D-TSVs.

Keywords

X-ray diffraction; copper; electroplating; scanning tunnelling microscopy; three-dimensional integrated circuits; 3D-TSV electroplating; Cu; Damascene electroplating; STM; XRD; electrolyte interface; molecular interplay; reactive conditions; scanning tunneling microscopy; size 50 nm; structure sensitive methods; suppressor additives; synchrotron x-ray diffraction; temporal instability; Acceleration; Additives; Chemistry; Copper; Electric potential; Electrodes; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940319

Filename

5940319