Title :
Investigation of ultra-thin Al2O3 film as Cu diffusion barrier on low-k (k=2.5) dielectrics
Author :
Ding, Shao-Feng ; Xie, Qi ; Chen, Fei ; Lu, Hai-Sheng ; Deng, Shao-Ren ; Detavernier, Christophe ; Ru, Guo-Ping ; Jiang, Yu-Long ; Qu, Xin-Ping
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
Ultrathin Al2O3 films were deposited by PEALD as Cu diffusion barrier on low-k (k=2.5) material. The thermal stability and electrical properties of the Cu/low k system with Al2O3 layers with different thickness were studied after annealing. The AES, TEM and EDX results revealed that the ultrathin Al2O3 films are thermally stable and have excellent Cu diffusion barrier performance. The electrical measurements of dielectric breakdown and TDDB tests further confirmed that the ultrathin Al2O3 film is a potential Cu diffusion barrier in the Cu/low-k interconnects system.
Keywords :
Auger electron spectra; X-ray chemical analysis; alumina; annealing; copper; diffusion barriers; electric breakdown; low-k dielectric thin films; thermal stability; transmission electron microscopy; AES; Al2O3-Cu; EDX; PEALD; TEM; annealing; diffusion barrier; electrical properties; low-k dielectrics; low-k interconnects system; thermal stability; time-dependent dielectric breakdown tests; ultra-thin film; Aluminum oxide; Annealing; Copper; Dielectrics; Films; Silicon; Thermal stability;
Conference_Titel :
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0503-8
DOI :
10.1109/IITC.2011.5940321
