Investigation of ultra-thin Al2O3 film as Cu diffusion barrier on low-k (k=2.5) dielectrics

Author

Ding, Shao-Feng ; Xie, Qi ; Chen, Fei ; Lu, Hai-Sheng ; Deng, Shao-Ren ; Detavernier, Christophe ; Ru, Guo-Ping ; Jiang, Yu-Long ; Qu, Xin-Ping

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai, China

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

Ultrathin Al₂O₃ films were deposited by PEALD as Cu diffusion barrier on low-k (k=2.5) material. The thermal stability and electrical properties of the Cu/low k system with Al₂O₃ layers with different thickness were studied after annealing. The AES, TEM and EDX results revealed that the ultrathin Al₂O₃ films are thermally stable and have excellent Cu diffusion barrier performance. The electrical measurements of dielectric breakdown and TDDB tests further confirmed that the ultrathin Al₂O₃ film is a potential Cu diffusion barrier in the Cu/low-k interconnects system.

Keywords

Auger electron spectra; X-ray chemical analysis; alumina; annealing; copper; diffusion barriers; electric breakdown; low-k dielectric thin films; thermal stability; transmission electron microscopy; AES; Al₂O₃-Cu; EDX; PEALD; TEM; annealing; diffusion barrier; electrical properties; low-k dielectrics; low-k interconnects system; thermal stability; time-dependent dielectric breakdown tests; ultra-thin film; Aluminum oxide; Annealing; Copper; Dielectrics; Films; Silicon; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940321

Filename

5940321